7454 - All Nexus: Why do RTL and gate-level simulations of RAM exhibit mismatched responses during read/write operations?

Description: The design could have a read/write conflict as both operation may happen simultaneously.

Solution: To fix this issue there is an option on the Synthesis Strategy settings which insert additional glue logic to the RAM read/write port to resolve this conflict.

(1) For LSE, the Strategy Synthesis Setting is named as "Read Write Check on RAM" must be set to "True". However, this option is only available on Radiant 2024.1 or later.

(2) For SynplifyPro, the Strategy Synthesis Setting is named as �Automatic Read/Write Check Insertion for RAM� and should be set to "True"

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7454 - All Nexus: Why do RTL and gate-level simulations of RAM exhibit mismatched responses during read/write operations?

7454 - All Nexus: Why do RTL and gate-level simulations of RAM exhibit mismatched responses during read/write operations?

Related Articles

5624 - LatticeECP3: Is it allowed to read and write on the same address at the same time?

6901 - iCE40: Can the EBR write clock be asynchronous to the read clock?

7770 - Avant-AT-G: The instantiated PDPSC32K thru inferring RAM reads ALL-0 input when simultaneously reading and writing on the same address.

3767 - What is the limit of writing or reading of Single Port RAM for MachXO2 devices? Why&nbsp;can't I&nbsp;find&nbsp;the exact&nbsp;limit on how&nbsp;fast&nbsp;write or read from&nbsp;Single Port RAM can be done?

6650 - Nexus : Can we monitor the voltage of Block Ram with Nexus ADC?

3767 - What is the limit of writing or reading of Single Port RAM for MachXO2 devices? Why can't I find the exact limit on how fast write or read from Single Port RAM can be done?