6099 - Platform Manager II: What is the lifespan of EEPROM (Memory Programming / Erase Specifications)?
Description:
The L-ASC10 device is built at our Foundry partners United Microelectronics Corp. (UMC) in Taiwan and Seiko-Epson in Japan, on the Lattice EE8A Technology. The EE8A Technology demonstrates excellent data retention characteristics. Lattice characterizes and reliability tests our devices for all known mechanisms affecting data retention lifetime at the technology development and product qualification stages.
For example, shown below is a plot using the maximum allowed VTH shift (the EE cell turned off electron loss) at wafer test and various activation energies (Ea).
The lifetime projection at 130C is >10 years without question (The 100,000 hour scale is equivalent to 11.4 years).
The 130C data is converted from the 180C SORT2 plot using VTH=a(T)*ln(t)+b where b=constant and a(T) contains the Arrhenius temperature dependence.
As verified with factor, the technology allows 1000 program/erase cycles